Effects of hydrogen during molecular beam epitaxy of GaN

Effects of hydrogen during molecular beam epitaxy of GaN

Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

The reconstruction and surface morphology of gallium nitride (0001) and (000 ) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

Gallium Ga surface desorption behavior was investigated using reflection high-energy electron diffraction during the GaN growth. It was found that the desorption of Ga atoms from the 0001 GaN surfaces under different III-V ratio dependents on the coverage of adsorbed atoms. Doing so led to desorption energies of 2.76 eV for Ga droplets, 1.24–1.89 eV for Ga under Ga-rich growth conditions, and 0...

Growth of GaN on porous SiC by molecular beam epitaxy

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 10 cm for edge dislocations and 1 10 cm for screw dislocations are achieved in GaN films of 1 m thickness grown under optimal conditions. Reve...